| 摘要 |
PROBLEM TO BE SOLVED: To provide a means for accurately calibrating a sense amplifier for reading data of a memory cell on a chip. SOLUTION: A resistive cross point memory (RXPtM) cell array device 10 (one example of which is a magnetic random access memory(MRAM) device) includes a chip 40 on which an array 12 of RXPtM cells is formed, an array 44 of sense amplifiers used in sensing resistance values of the RXPtM cells 14, and an input/output(I/O) controller 48 are formed. The I/O controller 48 includes a calibration controller 50. The calibration controller 50 tests the combination of a particularly selected memory cell 44 and one sense amplifier 26 of the array 44 of sense amplifiers related to the memory cell 14 in view of then existing environmental conditions, to assure that the sense amplifier 26 has an acceptable calibration state. The sense amplifier 26 is recalibrated if the amplifier has not passed a calibration test. When proper calibration of the sense amplifier 26 is indicated, then sensing of a data value proceeds.
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