| 摘要 |
PURPOSE: To provide outer electrode structure for a semiconductor element, which is superior in barrier performance with respect to the diffusion of Sn in a solder ball and which does not give large stresses to a barrier metal electrode and to the periphery. CONSTITUTION: The barrier metal electrode, inserted between the solder ball 20 and the wiring pad 12, has the barrier metal layer 16 of a two-layer structure, which is constituted of a lower Ni-V layer having tensile stress and a granular crystal organization and an upper Ni-V film, having compression stress and columnar crystal organization. Both stresses are canceled, and stresses given to peripheral structure due to the barrier metal electrode are reduced. At sputtering, substrate bias in the lower Ni-V film is set to '0' and that in the upper Ni-V film to 200 W, and films are respectively formed. |
