THIN FILM TRANSISTOR, FABRICATING METHOD THEREOF AND ELECTROLUMINESCENCE DISPLAY DEVICE USING THE SAME

摘要

PURPOSE: A thin film transistor(TFT) is provided to improve a switching characteristic of the TFT and to remarkably increase a current characteristic as compared with polysilicon used as a channel layer by using monocrystal silicon as the channel layer of the TFT formed on a glass substrate. CONSTITUTION: Amorphous silicon formed on the substrate is crystal-grown to be polysilicon and the polysilicon is crystal-grown to be monocrystal silicon so that a monocrystal silicon channel layer(122,124) is formed. A gate insulation layer(135) is formed on the monocrystal silicon channel layer. A gate thin film formed on the gate insulation layer is patterned to form a gate electrode(142,144). Contact holes are formed in a source/drain insulation layer(155) so that the gate electrode is insulated and a part of the monocrystal silicon channel layer corresponding to both sides of the gate electrode is exposed. A source electrode(162,166) and a drain electrode(164,168) are formed by using the contact hole as a medium, in contact with the monocrystal silicon channel layer.