发明名称 SEMICONDUCTOR ETCH APPARATUS HAVING BAFFLE PLATE
摘要 PURPOSE: A semiconductor etch apparatus having a baffle plate is provided to control a pressure of an etch apparatus by changing a structure of a slit of a baffle plate. CONSTITUTION: A baffle(100) is contacted with a chuck for loading a wafer(W) in the inside of a chamber(10), namely an outer circumference of a lower electrode(14) and an inner wall of the chamber(10). The baffle(100) has a shape of ring. A plurality of slits are formed at a plate of the baffle(100) in order to exhaust the remaining gas from the inside of the chamber(10) to a lower portion of the chamber(10). The slits are radially arranged in a predetermined interval along a circumference of the baffle(100). Each slit has an upper taper shape and a lower taper shape. The slits are formed by considering an exhausting effect of a vacuum pump.
申请公布号 KR20030005494(A) 申请公布日期 2003.01.23
申请号 KR20010040808 申请日期 2001.07.09
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 YOON, YEONG SU
分类号 H01L21/306;(IPC1-7):H01L21/306 主分类号 H01L21/306
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