发明名称 |
SEMICONDUCTOR ETCH APPARATUS HAVING BAFFLE PLATE |
摘要 |
PURPOSE: A semiconductor etch apparatus having a baffle plate is provided to control a pressure of an etch apparatus by changing a structure of a slit of a baffle plate. CONSTITUTION: A baffle(100) is contacted with a chuck for loading a wafer(W) in the inside of a chamber(10), namely an outer circumference of a lower electrode(14) and an inner wall of the chamber(10). The baffle(100) has a shape of ring. A plurality of slits are formed at a plate of the baffle(100) in order to exhaust the remaining gas from the inside of the chamber(10) to a lower portion of the chamber(10). The slits are radially arranged in a predetermined interval along a circumference of the baffle(100). Each slit has an upper taper shape and a lower taper shape. The slits are formed by considering an exhausting effect of a vacuum pump.
|
申请公布号 |
KR20030005494(A) |
申请公布日期 |
2003.01.23 |
申请号 |
KR20010040808 |
申请日期 |
2001.07.09 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
YOON, YEONG SU |
分类号 |
H01L21/306;(IPC1-7):H01L21/306 |
主分类号 |
H01L21/306 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|