发明名称 |
SWITCHING ELEMENT FOR X-RAY SENSOR AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
PURPOSE: A switching element for x-ray sensor and method for manufacturing the same is provided to improve TFT operating characteristics by protecting the TFT from an external electric field, while increasing yield rate of TFT array. CONSTITUTION: A switching element comprises a TFT(112) formed on a transparent substrate(101); a first protective insulating film(108) covering the TFT; capacity electrodes(109a,109c) formed on the first protective insulating film and connected to a grounding wire(102) in such a manner that the capacity electrode partially shields the TFT; a second protective insulating film(115) covering capacity electrodes formed on the first protective insulating film; and a pixel electrode(107) formed on the second protective insulating film and connected to a terminal(106b) of the TFT. The grounding wire is arranged in the lower portion of the first protective insulating film, and the first protective insulating film and the second protective insulating film use an inorganic insulating film. |
申请公布号 |
KR20030006408(A) |
申请公布日期 |
2003.01.23 |
申请号 |
KR20010042124 |
申请日期 |
2001.07.12 |
申请人 |
DRTECH CORP |
发明人 |
KIM, CHANG WON;YOON, JEONG GI |
分类号 |
H01L27/146;G01T1/20;G01T1/24;G01T1/29;G02F1/136;G03B42/02;G21K4/00;H01L21/336;H01L21/84;H01L27/12;H01L27/14;H01L29/786;H04N5/32;H04N5/335;H04N5/369 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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