发明名称 |
Methods of forming metal layers using metallic precursors |
摘要 |
Methods of forming metal layers include techniques to form metal layers using atomic layer deposition techniques that may be repeated in sequence to build up multiple atomic metal layers into a metal thin film. The methods include forming a metal layer by chemisorbing a metallic precursor comprising a metal element and at least one non-metal element that is ligand-bonded to the metal element, on a substrate. The metal element may include tantalum. The chemisorbed metallic precursor is then converted into the metal layer by removing the at least one non-metal element from the metallic precursor through ligand exchange. This removal of the non-metal element may be achieved by exposing the chemisorbed metallic precursor to an activated gas that is established by a remote plasma, which reduces substrate damage. The activated gas may be selected from the group consisting of H2, NH3, SiH4 and Si2H6 and combinations thereof. These steps may be performed at a temperature less than about 650° C.
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申请公布号 |
US2003017697(A1) |
申请公布日期 |
2003.01.23 |
申请号 |
US20020196814 |
申请日期 |
2002.07.17 |
申请人 |
CHOI KYUNG-IN;KANG SANG-BUM;KIM BYUNG-HEE;CHOI GIL-HEYUN |
发明人 |
CHOI KYUNG-IN;KANG SANG-BUM;KIM BYUNG-HEE;CHOI GIL-HEYUN |
分类号 |
H01L21/285;H01L21/768;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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