| 摘要 |
PURPOSE: To provide a semiconductor device having good transistor characteristics and its fabricating method. CONSTITUTION: The active region of a semiconductor substrate 1 is isolated electrically by trench isolation comprising a trench 3, a silicon oxide film 4 formed on the inner wall of the trench 3, an antioxidation film 6 formed between the silicon oxide film 4 and the semiconductor substrate 1, and an oxide film 7 filling the trench 3. A gate oxide film 8 is formed by strong oxidation generating at least one of hydrogen radical and oxygen radical. Consequently, the gate oxide film 8 is formed with a uniform thickness such that the film thickness TA1 in a region directly above the antioxidation film 6 is substantially equal to the film thickness TB1 in a region directly below a gate electrode layer 9.
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