发明名称 Method for planarizing deposited film
摘要 <p>After forming a groove (12) in a surface portion of a substrate, a deposited film (15) is formed on the substrate so as to fill the groove. The deposited film is subjected to a first stage of chemical mechanical polishing with a relatively high rotation speed and a relatively low pressure, so as to eliminate an initial level difference (15a) formed in the deposited film due to the groove. After eliminating the initial level difference, the deposited film is subjected to a second stage of the chemical mechanical polishing with a relatively low rotation speed and a relatively high pressure, so as to remove a portion of the deposited film present outside the groove.</p>
申请公布号 EP1278241(A2) 申请公布日期 2003.01.22
申请号 EP20020005636 申请日期 2002.03.12
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD 发明人 HIDEAKI, YOSHIDA
分类号 H01L21/3205;H01L21/768;H01L21/304;H01L21/306;H01L21/321;(IPC1-7):H01L21/768 主分类号 H01L21/3205
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