发明名称 |
Method for forming aluminum lines over aluminum-filled vias in a semiconductor substrate |
摘要 |
A method for forming aluminum lines over aluminum-filled vias in a semiconductor substrate that can compensate for some misalignment between the filled vias and the lines. By alternately depositing liner-barrier layers and aluminum layers on the substrate, different etch chemistries can be used that can anisotropically etch an aluminum layer used to form the lines without etching voids in the aluminum-filled vias.
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申请公布号 |
US6509274(B1) |
申请公布日期 |
2003.01.21 |
申请号 |
US20000632486 |
申请日期 |
2000.08.04 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
GUO TED;CHOU JING-PEI;CHEN LIANG-YUH;MOSELY RODERICK C. |
分类号 |
H01L21/768;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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