发明名称 Charge transfer device and a semiconductor circuit including the device
摘要 By providing a semiconductor device including a charge transfer channel to one end of which electric charges supplied from a charge supply unit are input, and which includes a plurality of branching regions at an intermediate portion, a plurality of gate electrodes provided on the corresponding branching regions of the charge transfer channel via insulating films, an input-signal supply unit for supplying each of the gate electrodes with an input signal, a transfer electrode, provided on the charge transfer channel via a gate insulating film, for performing control so that the electric charges are transferred in a predetermined direction within the charge transfer channel, a conversion unit for coverting the transferred electric charges into a voltage, and a sense amplifier to which an output signal from the conversion unit is input, and by providing a semiconductor circuit which includes such a device, it is possible to reduce the scale of circuitry, increase the calculation speed, and reduce electric power consumption.
申请公布号 US6510193(B1) 申请公布日期 2003.01.21
申请号 US19960739786 申请日期 1996.10.30
申请人 CANON KABUSHIKI KAISHA 发明人 KOCHI TETSUNOBU;MIYAWAKI MAMORU
分类号 H01L27/148;G11C11/35;G11C19/28;H01L21/339;H01L29/762;H01L29/768;(IPC1-7):G11C19/28 主分类号 H01L27/148
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