| 发明名称 |
Solventless, resistless direct dielectric patterning |
| 摘要 |
Processes for patterning radiation sensitive layers are disclosed. In one embodiment, the process includes depositing a radiation sensitive material on a substrate by chemical vapor deposition. The radiation sensitive material is exposed to radiation to form a pattern and the pattern is developed using a supercritical fluid (SCF).
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| 申请公布号 |
US6509138(B2) |
申请公布日期 |
2003.01.21 |
| 申请号 |
US20000482193 |
申请日期 |
2000.01.12 |
| 申请人 |
SEMICONDUCTOR RESEARCH CORPORATION;CORNELL RESEARCH FOUNDATION, INC.;MASSACHUSETTS INSTITUTE OF TECHNOLOGY |
发明人 |
GLEASON KAREN K.;OBER CHRISTOPHER;HERR DANIEL |
| 分类号 |
G03F7/16;G03F7/32;G03F7/36;(IPC1-7):G03F7/26 |
主分类号 |
G03F7/16 |
| 代理机构 |
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