发明名称 SHADOW MASK AND BASE MATERIAL THEREFOR
摘要 <p>A high-definition shadow mask, including a stretched mask, and a base material (1) for a shadow mask, wherein the center line average roughness Ra of the small aperture-side surface is not more than 0.25 mu m, and the center line average roughness Ra of the large aperture-side surface is larger than the center line average roughness Ra of the small aperture-side surface by at least 0.25 mu m and is not larger than 1 mu m. <IMAGE></p>
申请公布号 SG93846(A1) 申请公布日期 2003.01.21
申请号 SG19990005204 申请日期 1999.10.19
申请人 DAI NIPPON PRINTING CO., LTD. 发明人 AKIRA MAKITA;YUTAKA MATSUMOTO
分类号 H01J29/07;(IPC1-7):H01J29/07 主分类号 H01J29/07
代理机构 代理人
主权项
地址
您可能感兴趣的专利