发明名称 |
SHADOW MASK AND BASE MATERIAL THEREFOR |
摘要 |
<p>A high-definition shadow mask, including a stretched mask, and a base material (1) for a shadow mask, wherein the center line average roughness Ra of the small aperture-side surface is not more than 0.25 mu m, and the center line average roughness Ra of the large aperture-side surface is larger than the center line average roughness Ra of the small aperture-side surface by at least 0.25 mu m and is not larger than 1 mu m. <IMAGE></p> |
申请公布号 |
SG93846(A1) |
申请公布日期 |
2003.01.21 |
申请号 |
SG19990005204 |
申请日期 |
1999.10.19 |
申请人 |
DAI NIPPON PRINTING CO., LTD. |
发明人 |
AKIRA MAKITA;YUTAKA MATSUMOTO |
分类号 |
H01J29/07;(IPC1-7):H01J29/07 |
主分类号 |
H01J29/07 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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