发明名称 Strongly textured atomic ridge and dot Mosfets, sensors and filters
摘要 The present invention provides a MOSFET device comprising: a substrate including a plurality of atomic ridges, each of the atomic ridges including a semiconductor layer comprising Si and an dielectric layer comprising a Si compound; a plurality nanogrooves between the atomic ridges; at least one elongated molecule located in at least one of the nanogrooves; a porous gate layer located on top of the plurality of atomic ridges. The present invention also provides a membrane comprising: a substrate; and a plurality of nanowindows in the substrate and a method for forming nanowindows in a substrate.
申请公布号 US6509619(B1) 申请公布日期 2003.01.21
申请号 US20000658599 申请日期 2000.09.08
申请人 STARMEGA CORPORATION 发明人 KENDALL DON;GUTTAG MARK J.
分类号 B81B3/00;G01N27/414;G01Q70/06;G01Q70/08;H01L21/335;H01L29/06;H01L49/00;(IPC1-7):H01L27/14 主分类号 B81B3/00
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