发明名称 CHEMICAL MACHINE POLISHING APPARATUS AND CHEMICAL MACHINE POLISHING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a chemical machine polishing apparatus capable of making the polishing rate substantially uniform within the polishing surface and easily providing good flatness all over on a board. SOLUTION: A board holder 20 is provided with a plurality of heaters 25 and a plurality of temperature sensors 26. While a board 2 held by the board holder 20 is heated with a heater 25, a film to be polished formed on the board 2 is polished. A temperature correction amount for obtaining a desired polishing rate on the whole of the polishing surface is preset by a temperature correction amount setting means 32, and the heaters 25 are controlled by a heater controller 31 so that the heating temperatures of the heaters 25 detected by the temperature sensors 26 correspond to the preset temperature correction amount.
申请公布号 JP2003019659(A) 申请公布日期 2003.01.21
申请号 JP20010206939 申请日期 2001.07.06
申请人 NEC KYUSHU LTD 发明人 IDE SHIGEAKI
分类号 B24B37/013;B24B37/015;B24B37/30;B24B49/14;H01L21/304 主分类号 B24B37/013
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