| 摘要 |
FIELD: nuclear instrumentation engineering. SUBSTANCE: invention is aimed at development of high-sensitivity detectors of relativistic, X-ray, and neutron-radiation particles. Detector has bidimensional array of semiconductor detecting elements or pixels made in the form of bipolar structures with three layers of alternating polarity of conductivity which are provided with low-dope intermediate area covered by spatial charge areas, and p-n junctions of mentioned bipolar structure abutting against this intermediate area. Buses connected to mentioned detecting elements or pixels are parallel to coordinate axes. EFFECT: enhanced sensitivity, accuracy, speed, and reliability. 7 cl, 15 dwg, 1 ex |
