发明名称 |
METHOD FOR PRODUCING METAL-INSULATOR-HIGH- TEMPERATURE-SUPERCONDUCTOR NANOSTRUCTURE |
摘要 |
FIELD: producing metal-insulator-high-temperature-superconductor or metal-insulator-superconductor structures. SUBSTANCE: method involves exposure of cuprate high-temperature superconductor surface to accelerated particle flux whose energy is sufficient for their penetration into material through depth equal to desired thickness of insulator. Surface is watched in the course of structure formation and exposure is ceased as soon as metal segregate is noted on this surface. In the process nuclear-pure surface of high-temperature superconductor with degradation layer of thickness smaller than desired thickness of insulator is produced in advance in superhigh vacuum. Mentioned exposure on surface is effected by electron current whose energy is higher than minimal activation energy of superconductor metal atoms. EFFECT: ability of producing metal-insulator-superconductor structure with nanodimensions not only in depth but also in plane. 3 cl, 3 dwg
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申请公布号 |
RU2197037(C1) |
申请公布日期 |
2003.01.20 |
申请号 |
RU20010111542 |
申请日期 |
2001.04.26 |
申请人 |
FIZIKO-TEKHNICHESKIJ INSTITUT IM. A.F.IOFFE RAN |
发明人 |
MIKUSHKIN V.M.;SHNITOV V.V. |
分类号 |
H01L39/24;(IPC1-7):H01L39/24 |
主分类号 |
H01L39/24 |
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地址 |
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