| 摘要 |
A method for manufacturing a semiconductor device with a dual damascene structure is comprising the steps of preparing a semiconductor substrate, forming a first wiring layer over said semiconductor substrate, forming an inorganic insulating film over said first wiring layer, forming a via hole in said inorganic insulating film by forming a first resist pattern with an opening on said inorganic insulating film and by etching said inorganic insulating film with said first resist pattern as an etching mask, eliminating said first resist pattern, forming an organic insulating film so that said organic insulting film covers an upper side of said inorganic insulating film and an interior of said via hole, forming a hard mask on said organic insulating film, forming a hard mask pattern by forming a second resist pattern with an opening on said hard mask and by etching said hard mask with said second resist pattern as an etching mask, forming a wiring groove by etching said organic insulating film with said second resist pattern and said hard mask pattern as etching masks until said organic insulating film inside said via hole is eliminated and simultaneously eliminating said second resist pattern, and implanting a conductive substance into said via hole and said wiring groove.
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