发明名称 SEMICONDUCTOR MEMORY
摘要 PROBLEM TO BE SOLVED: To improve stability of a memory cell without causing destruction of data in write or read. SOLUTION: In a semiconductor memory, there are provided: a voltage control circuit for supplying low voltage or high voltage to a word line selected for write or read; and an input/output control circuit for performing a single time data write or read to a plurality of memory cells corresponding to a selected word line.
申请公布号 JP2003016786(A) 申请公布日期 2003.01.17
申请号 JP20010195914 申请日期 2001.06.28
申请人 MITSUBISHI ELECTRIC CORP 发明人 YOSHIZAWA TOMOAKI
分类号 G11C11/418;G11C11/41;G11C11/417 主分类号 G11C11/418
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