| 摘要 |
PROBLEM TO BE SOLVED: To enable the inside of a treatment container to be quickly precoated firmly. SOLUTION: By a high-frequency plasma apparatus, having a placement table 22 for placing a wafer 23, a treatment vessel 11 for accommodating the placement table 22, an exhaust means 13 for exhausting in the treatment vessel 11, a gas supply means 14 for supplying gas into the treatment vessel 11, and an antenna 30 for supplying a high-frequency electromagnetic field F into the treatment vessel 11, gas is supplied into the treatment chamber 11, while the wafer 23 is not being placed on the placement rest 22, at the same time, the electromagnetic field F is supplied into the treatment vessel 11 for generating a plasma P, and the plasma P is used for forming an insulation film 51 at least on the inner surface of the treatment chamber 11.
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