| 摘要 |
PROBLEM TO BE SOLVED: To prevent the crosstalk between capacitors and to reduce the area and interval of array while keeping the reliability in memory operation of each capacitor. SOLUTION: A semiconductor device comprises capacitors 43A-43D on a silicon oxide film 23. The capacitors 43A-43D comprise a node electrode 3A provided on the silicon oxide film 23, a silicon oxide film 29 selectively provided on the node electrode 3A for forming a capacitor region, an SBT film 31 provided at least on the node electrode 3A between the silicon oxide films 29, and plate electrodes 5A-5D so provided on the SBT film 31 as to cross the node electrode 3A. Thus, such capacitor is provided as no SBT film 31 is present between the node electrode 3A and the silicon oxide film 29 except for the capacitor region while the SBT film 31 is held in such part as the node electrode 3A crosses the plate electrodes 5A-5D.
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