| 发明名称 |
SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD |
| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method remarkably improving cost performance of the semiconductor device by applying an oxygen ion injection process and an annealing process to the manufacturing method of the semiconductor device. SOLUTION: A plurality of MOSFETs and an element separation area are constructed by a new manufacturing method using oxygen implantation, and a semiconductor integrated circuit device superior in performance is constituted.
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| 申请公布号 |
JP2003017579(A) |
申请公布日期 |
2003.01.17 |
| 申请号 |
JP20010371863 |
申请日期 |
2001.12.05 |
| 申请人 |
SEIKO INSTRUMENTS INC |
发明人 |
ISHII KAZUTOSHI |
| 分类号 |
H01L21/8247;H01L21/265;H01L21/8234;H01L21/8238;H01L27/08;H01L27/088;H01L27/092;H01L27/10;H01L27/115;H01L29/78;H01L29/788;H01L29/792;(IPC1-7):H01L21/823;H01L21/823;H01L21/824 |
主分类号 |
H01L21/8247 |
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