| 摘要 |
PROBLEM TO BE SOLVED: To provide a CMP pad capable of efficiently, easily managing processes at high-speed at a polishing film, by holding a surface state of the pad without the need for dressing processing in a CMP technique for planarizing an insulation film for separating an interlayer insulating film, a BPSG film and a shallow trench, and to provide a method for polishing. SOLUTION: The pad for polishing the film formed on a substrate in a chemical-mechanical manner. A conditioning-free CMP pad comprises smooth minute protrusions arranged, on at least a support layer surface. The method for polishing the substrate comprises steps of pressing a predetermined substrate against the CMP pad having the smooth minute protrusions arranged on the surface of at least the support layer, moving the substrate or a polishing platen without the need for treatment, such as dressing of the surface of the pad before polishing, while supplying the abrasives between the substrate and the CMP pad, and then polishing the substrate. |
