| 摘要 |
PROBLEM TO BE SOLVED: To provide a surge protective element for which a surge permissible amount is improved. SOLUTION: A first N-type conductive region 2 and a second N-type conductive region 3 are formed on a P-type semiconductor substrate 1; and first P-type conductive regions 4, 5 and 6 inside the first N-type conductive region 2 and second P-type conductive regions 7, 8 and 9 inside the second N-type conductive region 3 are formed in point symmetry. The first P-type conductive regions 4, 5 and 6 and the second P-type conductive regions 7, 8 and 9 are arranged so as to pile up ends respectively in plane view. In order to cover the exposed surface of the first P-type conductive regions 4, 5 and 6 and the second P-type conductive regions 7, 8 and 9, first resistors 12, 13 and 14 and second resistors 15, 16 and 17 are formed. By the structure, it becomes the same as the state of parallelly forming four pieces of unit thyristors indicated by a PNPN structure 53 for which the resistor is added serially to a PNP transistor and base, a current is shunted and respective unit thyristor regions easily perform an igniting operation.
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