| 摘要 |
PROBLEM TO BE SOLVED: To reduce the ON resistance and switching loss of a vertical MOSFET. SOLUTION: A semiconductor device is provided with a semiconductor substrate, a plurality of vertical field effect transistor cells formed in a parallelly connected state on the semiconductor substrate, a gate potential power feed part provided on the surface of the semiconductor substrate, first gate wiring provided on the semiconductor substrate and electrically connected to the gate potential power feed part, and second gate wiring provided on the semiconductor substrate electrically connected to the first gate wiring and also connected to the gate electrodes of the respective transistor cells. The second gate wiring is extended from the first gate wiring and is provided with a tip. Also, the adjacently extended ones of the second gate wiring are extended from the first gate wiring so as to turn a current flowing direction to mutually opposite directions. |
