| 摘要 |
PROBLEM TO BE SOLVED: To solve the problems of damage to a chip, increased in the number of steps and in production cost because piercing through holes are formed for each semiconductor chip in a semiconductor for three-dimensional mounting. SOLUTION: In this method, through holes are not formed on each semiconductor chip 9 itself. Instead of forming the dense through holes, wiring patterns are previously formed by conductive layers 11 on a corresponding region for each chip 9 which is on the rear surface of a semiconductor wafer 10 for each wafer. Dicing is performed for each chip, and then a conductive layer 18 is formed of the side surface of the chip 9 to connect between the both surfaces of the chip. Thus, the three-dimensional mounting type semiconductor device which can be packaged highly densely can be realized by a simple method.
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