| 摘要 |
The present invention provides a spin-valve thin film magnetic element comprising an antiferromagnetic layer, a pinned magnetic layer in which the direction of magnetization is fixed by an exchange coupling magnetic field with the antiferromagnetic layer, a non-magnetic conductive layer, and a free magnetic layer, at least one of the pinned magnetic layer and the free magnetic layer being divided into two layers of a first magnetic layer and a second magnetic layer via a non-magnetic intermediate layer, the directions of magnetization of the first and second magnetic layers being in an antiparallel relation to one another, and at least one of the pinned magnetic layer and the free magnetic layer being in a ferrimagnetic state, wherein each of the first and second magnetic layers has a NiFe layer at the side making contact with at least the non-magnetic intermediate layer, the non-magnetic intermediate layer comprises Ru with a thickness of 0.27 to 1.03 nm, and the magnitude of the saturation magnetization when the directions of magnetization of the first and second magnetic layers are parallel to one another is larger than 40 kA/m.
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