| 摘要 |
A semiconductor memory device includes: at least one memory cell block including multiple dynamic memory cells arrayed in a matrix; a row address decoder and a column address decoder that select a memory cell in the memory cell block, which is specified by an address including a row address and a column address; an output buffer that causes data to be output from the selected memory cell specified by the address; a preset circuit that presets an output level of the output buffer; and a preset control module that controls an operation of the preset circuit. At every time of outputting data from the memory cell selected by the column address decoder, the output level of the output buffer is preset, prior to output of the data from the selected memory cell by means of the output buffer. This arrangement effectively prevents the potential noise in a power source of the semiconductor memory device.
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