发明名称 |
VDD modulated sram for highly scaled, high performance cache |
摘要 |
The present invention provides a device and method for fast SRAM reading and writing. A boost voltage source is provided, wherein the boost voltage source operates to increase a conductance of a latch device in the SRAM cell relative to a conductance of an access device in the SRAM cell. By virtue of the increased relative conductance between the latch and access devices (beta ratio), the access device may be assume a wider width without jeopardizing the read stability of the cell.
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申请公布号 |
US2003012048(A1) |
申请公布日期 |
2003.01.16 |
申请号 |
US20010893236 |
申请日期 |
2001.06.27 |
申请人 |
CHAPPELL BARBARA A.;YOUNG IAN |
发明人 |
CHAPPELL BARBARA A.;YOUNG IAN |
分类号 |
G11C11/412;(IPC1-7):G11C11/00 |
主分类号 |
G11C11/412 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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