| 摘要 |
A full-image exposure process of a field of a semiconductor wafer having an alignment mark is disclosed. The field of the semiconductor wafer may be located at an edge of the wafer, such as the lower-left or upper-right edge of the wafer, and is exposed using a full-image mask, such as a positive photoresist mask, and that can be inclusive of the alignment mark. A clear out process is subsequently performed around the alignment mark on the field of the semiconductor wafer to reveal the alignment mark. Prior deposition of photoresist or other layers, and subsequent exposure and stripping of the photoresist and etching of the other layers may also be performed.
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