| 摘要 |
PURPOSE: A method for etching a hole in an electric field effect electron emission device is provided to be capable of uniformly forming fine holes by improving hygroscopic of photoresist using O2 plasma. CONSTITUTION: A cathode(2), an insulating layer(3) and a gate(4) are sequentially formed on a substrate(1). A photoresist mask(8') is formed on the gate(4). An opening is formed by selectively etching the gate using the photoresist mask(8'). The photoresist mask(8') is partially etched by using O2 plasma. Then, a hole(3a) is formed by wet-etching of the insulating layer(3) using the etched photoresist mask(8').
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