| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a thin film of higher quality by a gas cluster ion beam at room temperature, without damaging the surface of a substrate. SOLUTION: This method of forming the reacted thin film comprises forming gas clusters at ordinary temperature and under normal pressure, which are atomic or molecular assembly of gaseous oxygen, accelerating the cluster ions generated by means of bombarding the gas clusters with electrons by accelerating voltage, irradiating the surface of the substrate with the cluster ions, and reacting them with the substrate to form a reacted thin film on the surface of the substrate.
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