SEMICONDUCTOR MEMORY DEVICE WITH ROW DECODER USING DIFFERENT POWER SUPPLY VOLTAGES ACCORDING TO MODES OF OPERATION AND METHOD FOR CONTROLLING ROW DECODER

摘要

PURPOSE: A semiconductor memory device is provided to minimize power consumption without reducing an operating speed and to have a row decoder using different power supply voltages according to modes of operation. CONSTITUTION: An external address(A0-Ai) applied through an address buffer(2) is applied to a row decoder(8). An address transition detection(ATD) pulse generator(4) generates a pulse signal in response to address transitions, and a main pulse generator(10) expands and shapes the pulse signal to generate a main pulse signal, which is used as an enable signal of the row decoder(8). A write enable buffer(1) buffers a write enable signal(XWEb) to output a boosting block control signal(WE_BST) as one of output signals. A booster(6) boosts a supplied voltage up to a high voltage level in response to an address transition sense pulse(ATD) during a read mode of operation. The booster(6) sequentially lowers the boosted voltage in response to the address transition sense pulse(ATD) so as to a normal power supply voltage during a write mode of operation.