| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin-film deposition apparatus by a chemical vapor deposition method, which can form a thin film having uniform thickness on the surface even of a large substrate. SOLUTION: The thin-film deposition apparatus by the chemical vapor deposition method, which arranges a nozzle 4 having a cylindrical skirt part 7 at the bottom open side over the substrate 2 held by a susceptor 1, and forms the thin film 8 on the substrate 2 while blowing a source gas G onto the above substrate 2 through the nozzle 4, is characterized by optimizing a distance between the bottom end of the above skirt part 7 and the susceptor 1, to form the thin film 8 with uniform thickness on the surface of the above substrate.
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