发明名称 BIT LINE DECODING SCHEME AND CIRCUIT FOR DUAL BIT MEMORY WITH DUAL BIT SELECTION
摘要 PURPOSE: A bit line decoding scheme and circuit for dual bit memory with a dual bit selection are provided to selectively connect two bit lines to two intermediate data lines and selectively connect the intermediate data lines to sense amplifiers through decoding transistors. CONSTITUTION: The device comprises a flash memory array with a plurality of dual bit memory cells(10), a first decoder unit(11) connecting a voltage to bit lines of the memory array, the bit lines function both as source lines and as drain lines, a second decoder unit(12) connecting the bit lines to a plurality of intermediate data lines, a third decoder unit(13) connecting the plurality of intermediate data lines to a plurality of data lines connected to a plurality of sense amplifiers.
申请公布号 KR20030005066(A) 申请公布日期 2003.01.15
申请号 KR20020039107 申请日期 2002.07.06
申请人 HALO LSI, INC. 发明人 OGURA TOMOKO
分类号 G11C16/06;G11C7/18;G11C8/10;G11C16/04;G11C16/08;G11C16/24;(IPC1-7):G11C7/18 主分类号 G11C16/06
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