发明名称 |
Semiconductor device and method of making |
摘要 |
A semiconductor device (10) is formed that is bi-lateral and has a voltage blocking capability that is well suited to applications involving portable electronics. The semiconductor device has an epitaxial layer (14) that is formed on a semiconductor substrate (11). A doped region (24) is formed that extends from a top surface (16) of the epitaxial layer (14) to the underlying semiconductor substrate (11). The semiconductor device (10) has a source region (31) that is separated from the doped region (24) to provide a channel region (29). The channel region (29) is modulated by a gate structure (20) to determine if a current flow should be allowed through semiconductor device (10) or if semiconductor device (10) is to provide voltage blocking capability.
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申请公布号 |
US6507070(B1) |
申请公布日期 |
2003.01.14 |
申请号 |
US19960755926 |
申请日期 |
1996.11.25 |
申请人 |
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC |
发明人 |
SHEN ZHENG;ROBB STEPHEN P.;MITTER CHANG SU |
分类号 |
H01L29/08;H01L29/167;H01L29/417;H01L29/78;(IPC1-7):H01L29/76;H01L29/94;H01L31/062;H01L31/113 |
主分类号 |
H01L29/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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