发明名称 INTERNAL REFERENCE VOLTAGE GENERATOR CIRCUIT
摘要 PURPOSE: An internal reference voltage generator circuit is provided to be capable of adjusting an internal reference voltage in accordance with a temperature variation. CONSTITUTION: An internal reference voltage generator circuit comprises a differential amplifier(41), a resistor(R2), a PMOS transistor(P4), and a temperature-dependent variable voltage generator(43). The differential amplifier(41) amplifies the first reference voltage(VREF1) and an input voltage(VIN) to output an internal reference voltage. The resistor(R2) is connected between the second reference voltage(VSS) and the second input terminal(I2) of the differential amplifier(41). The PMOS transistor(P4) is connected between an output terminal(O1) of the amplifier(41) and the second input terminal(I2), and has a gate connected to receive an output voltage(VTEMP) of the temperature-dependent variable voltage generator(43). The temperature-dependent variable voltage generator(43) receives the third reference voltage(VREF2) and generates the output voltage(VTEMP) that is variable according to a temperature variation. A resistance value of the PMOS transistor(P4) is varied by the variable output voltage(VTEMP).
申请公布号 KR20030003904(A) 申请公布日期 2003.01.14
申请号 KR20010039760 申请日期 2001.07.04
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SIM, JAE YUN
分类号 H01L27/04;G05F3/24;G11C5/14;H01L21/822;H03F3/45;(IPC1-7):G11C5/14 主分类号 H01L27/04
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