| 摘要 |
There are provide a semiconductor device capable of increasing the operating speed of MOS transistors and improving current driving capability, and a method of manufacturing such a semiconductor device. A semiconductor device comprises a silicon substrate (1), an element isolation insulation film (2), a gate structure selectively formed on the main surface of the silicon substrate (1), and a sidewall (6) formed on the side face of the gate structure. The gate structure has a laminated structure with a gate insulation film (3) formed of a silicon oxide film, a gate electrode (4) formed of polysilicon, and a cobalt silicide layer (5) stacked in this order. The semiconductor device further comprises a source/drain region (7) selectively formed in the main surface of the silicon substrate (1) and a cobalt silicide layer (8) formed in the main surface of the silicon substrate (1), extending to a point under an end portion of the gate structure from a portion of the source/drain region (7) exposed from the sidewall 6 and the gate structure.
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