| 摘要 |
PURPOSE: A sense amplifier circuit is provided to employ a construction directly connected to the bitline without passing through a bitline separating circuit by a gate electrode or a source electrode of MOS transistor consisting of latch. CONSTITUTION: A sense amplifier circuit includes a Vcc precharge circuit(10), a bit line disconnecting circuit(20), a CMOS latch(30), a Vcc precharge circuit(40), a differential amplifier(50), a Vss precharge circuit(60), an output latch(70), a delay circuit(80) and a latch control circuit(90). The CMOS latch(30) includes four series NMOS transistors(33,34,35,36), each gate electrode of two NMOS transistors are cross-coupled directly to a pair of bit lines without interposition of the bit line disconnecting circuit(20). And, each gate electrode of the other two NMOS transistors(33,36) is cross-coupled to a pair of first stage output nodes(Va,/Va) of a post-stage of the bit line disconnecting circuit(20).
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