| 摘要 |
A bistable electrical circuit, such as a flip-flop, incorporating insulated-gate field-effect transistors as non-volatile memory elements. Read and write circuitry couple the memory elements to amplifying (switching) stages of the bistable circuit such that the state of the flip-flop, at the time a write signal is applied to the memory elements, is nonvolatilely stored. Upon application of a read signal the flip-flop is initialized to a state which is a function of the state of the flip-flop during the writing mode of operation. Data storage is maintained in the absence of all applied power to the bistable electrical circuit.
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