| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a thin film solar battery having a good reproducibility and a high conversion efficiency by suppressing a deterioration of interface characteristics due to a thermal diffusion in a manufacturing process. SOLUTION: The thin film solar battery comprises at least one pin junction p-type semiconductor layer 7 or an n-type semiconductor layer 3 made of an amorphous silicon thin film containing a microcrystal phase, an amorphous semiconductor layer containing its microcrystal phase, an i-type semiconductor layer 4 made of an amorphous silicon film, and an interface semiconductor layer of the amorphous silicon film in which a band gap is wider than that of the layer 4 and same conductivity type impurity as that of the amorphous silicon film containing the microcrystal phase is added in a low concentration and interposed in a junction interface between the amorphous semiconductor layer and the semiconductor layer 4. In this battery, the interface semiconductor layer has at least two layers (5, 6). An adding amount of an impurity of the interface semiconductor layer (i-type side interface layer) 5 of the interface side to the i-type semiconductor layer is smaller than that of the interface semiconductor layer (non-i-type side interface layer) 6 of the interface side to the p-type semiconductor layer or the n-type semiconductor layer.</p> |
