发明名称 NEW MICROCELL REDUNDANCY SYSTEM FOR HIGH PERFORMANCE eDRAM
摘要 PROBLEM TO BE SOLVED: To provide a new microcell redundancy system for a wide band width embedded DRAM having a SRAM cache interface. SOLUTION: For each bank of microcell array units comprising the eDRAM, at least one microcell unit is prepared as the redundancy to replace a defected microcell within the bank. After array testing, any defective microcell inside the bank is replaced with a redundancy microcell for that bank. A fuse bank structure implementing a lookup table is established for recording each redundant microcell address and its corresponding repaired microcell address. In order to allow simultaneous multi-bank operation, the redundant microcells may only replace the defective microcells within the same bank.
申请公布号 JP2003007084(A) 申请公布日期 2003.01.10
申请号 JP20020116365 申请日期 2002.04.18
申请人 INTERNATL BUSINESS MACH CORP <IBM> 发明人 LOUIS L SHEW;WANG LI-KONG
分类号 G06F12/08;G06F12/16;G11C11/401;G11C29/00;G11C29/04;G11C29/24;(IPC1-7):G11C29/00 主分类号 G06F12/08
代理机构 代理人
主权项
地址