发明名称 |
NEW MICROCELL REDUNDANCY SYSTEM FOR HIGH PERFORMANCE eDRAM |
摘要 |
PROBLEM TO BE SOLVED: To provide a new microcell redundancy system for a wide band width embedded DRAM having a SRAM cache interface. SOLUTION: For each bank of microcell array units comprising the eDRAM, at least one microcell unit is prepared as the redundancy to replace a defected microcell within the bank. After array testing, any defective microcell inside the bank is replaced with a redundancy microcell for that bank. A fuse bank structure implementing a lookup table is established for recording each redundant microcell address and its corresponding repaired microcell address. In order to allow simultaneous multi-bank operation, the redundant microcells may only replace the defective microcells within the same bank.
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申请公布号 |
JP2003007084(A) |
申请公布日期 |
2003.01.10 |
申请号 |
JP20020116365 |
申请日期 |
2002.04.18 |
申请人 |
INTERNATL BUSINESS MACH CORP <IBM> |
发明人 |
LOUIS L SHEW;WANG LI-KONG |
分类号 |
G06F12/08;G06F12/16;G11C11/401;G11C29/00;G11C29/04;G11C29/24;(IPC1-7):G11C29/00 |
主分类号 |
G06F12/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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