METHOD FOR MANUFACTURING TRANSISTOR

摘要

PURPOSE: A method for manufacturing a transistor is provided to prevent the increase of leakage current by forming a source/drain region after etching the upper part of an isolation layer. CONSTITUTION: A gate electrode(37) is formed on a n-type semiconductor substrate(31). A low-doped region(39) is formed at both sides of the gate electrode on the semiconductor substrate. An insulating space is formed at both sides of the gate electrode. The upper part of an isolation layer(33) is etched. A high-doped region(45) is formed on both sides of the gate electrode including as a second oxide space(43). The boundary region between the high-doped region and the isolation layer is etched as deeply as the isolation is etched.