发明名称 PLASMA TREATMENT APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus that can prevent abnormal discharge for uniform etching in the plasma treatment of a silicon-based substrate. SOLUTION: As the material of an electrode member 17 for a plasma treatment apparatus, fitted onto the front of a gas supply port of an electrode for plasma generation in the plasma treatment apparatus, a ceramic porous body having three-dimensional mesh structure where a skeleton section 18a of ceramic containing alumina is allowed to continue in a three-dimensional mesh shape is used, and gas for plasma generation is made to pass through via a void section 18b being formed in the three-dimensional mesh structure irregularly, thus making uniform the distribution of the gas to be supplied for preventing abnormal discharge, and achieving uniform etching without variation.
申请公布号 JP2003007683(A) 申请公布日期 2003.01.10
申请号 JP20010190973 申请日期 2001.06.25
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 ARITA KIYOSHI;IWAI TETSUHIRO;HAJI HIROSHI;SAKAMI SEIJI
分类号 H05H1/46;B01J19/08;H01L21/302;H01L21/3065 主分类号 H05H1/46
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