| 摘要 |
PROBLEM TO BE SOLVED: To provide an etching device, an etching method and a method for manufacturing semiconductor device capable of accurately etching a BARC without leaving an etching residue generated by reaction with a bose layer film. SOLUTION: The method for manufacturing a semiconductor device comprises steps of forming a TiN film 2 on the base layer film 1, forming a BARC 3 on this TiN film 2, applying a photoresist film on this BARC 3 and subjecting this photoresist film to exposure and development, and turn an etching gas containing at least Cl2 gas and CHF3 gas into plasma and etching the BARC 3, using the photoresist film as a mask.
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