POLY SILICON-GERMANIUM GATE ELECTRODE AND METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: A poly Si-Ge gate electrode and a method for fabricating the same are provided to prevent roughness of a surface by forming an amorphous silicon buffer layer under a poly Si-Ge layer and improve a characteristic of salicide by forming an amorphous silicon layer on the poly Si-Ge layer. CONSTITUTION: A gate oxide layer(20) is formed on an upper portion of a semiconductor substrate(10). An amorphous silicon buffer layer(30) is formed on an upper portion of a gate oxide layer(20). A poly SiGe layer(40) is formed on an upper portion of the amorphous silicon buffer layer(30). An amorphous silicon layer(50) is formed on an upper portion of the poly SiGe layer(40). A gate electrode is formed by patterning and etching a gate electrode pattern.