发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To suppress the occurrence of the oscillation of a device voltage with a large amplitude while improving the relationship between the switching loss and the loss due to conduction in a semiconductor device having diodes or switching devices made of silicon carbide. SOLUTION: A resistor 12 is connected in parallel to a diode 11 made of silicon carbide. Although the resistance component of the diode 11 considerably varies as the diode 11 turns on and off, variation in the resistance component of an LCR circuit formed by the diode 11 and external wiring can be suppressed because the resistor 12 is connected in parallel to the diode 11. In this way, it is more unlikely that the LCR circuit satisfies the condition of a natural oscillation and simultaneously the increase in the quality factor of the LCR circuit can be suppressed.
申请公布号 JP2003007832(A) 申请公布日期 2003.01.10
申请号 JP20010191072 申请日期 2001.06.25
申请人 MITSUBISHI ELECTRIC CORP 发明人 SATO KATSUMI;ISHIMURA CHOICHI;HARUGUCHI HIDEKI
分类号 H01L21/822;H01L21/82;H01L27/04;H01L27/06;H01L29/66;H03K17/74;(IPC1-7):H01L21/822 主分类号 H01L21/822
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