SURFACE LIGHT EMITTING SEMICONDUCTOR LASER DEVICE

摘要

PROBLEM TO BE SOLVED: To provide an oxide layer constriction surface light emitting semiconductor laser device which has a constitution capable of restraining distortion (stress) due to oxidation of a DBR mirror accompanied with generation of an Al oxide layer and is superior in reliability. SOLUTION: This surface light emitting semiconductor laser device 40 has the same constitution as a conventional surface light emitting semiconductor laser device, except that an Al0.98 Ga0.02 As layer 42 is used as an Al-containing oxidized layer used for forming an Al oxide layer that constitutes a current constriction region instead of a conventional AlAs layer, that an Al oxide layer 44 is obtained by selectively oxidizing Al contained in the Al0.98 Ga0.02 As layer 42, that a layer which constitutes a DBR mirror 46 is formed of 25 pairs of P-Al0.85 Ga0.15 As/P-Al0.2 Ga0.8 As instead of conventional 25 pairs of P-Al0.9 GaAs/P- Al0.2 GaAs, and that the oxidation width of a P-Al0.85 GaAs layer which constitutes a DBR mirror is limited to 2.5μm or below.