| 摘要 |
<p>A system (300, 400, 500) is disclosed for generating a charge pump voltage (310, 410, 510) for flash memory operations, wherein a supply voltage detection circuit (365, 475, 505) (e.g., analog to digital converter, digital thermometer) is configured to detect a supply voltage value (380, 480, 508) and generate one or more supply voltage level detection signals (370, 495, 535) associated therewith. The system further includes a charge pump circuit (305, 405, 547) comprising one or more stages operable to receive a supply voltage and generate the charge pump output voltage having a value greater than the supply voltage, and a charge pump compensation circuit operably coupled to the supply voltage detection circuit and the charge pump circuit. The charge pump compensation circuit is operable to receive the one or more output signals (370, 495, 535) from the supply voltage detection circuit and modulate a capacitive loading associated with the charge pump circuit based on the one or more ouput signals, thereby creating an improved low power charge pump which uses a modulated pumping capacitance (320, 330, 340, 350) to compensate for fluctuations of the input power supply (for example, VCC), to produce a low ripple and low noise output (310, 410, 510) which may be used as a pumped voltage for various mode operations (e.g., erase, program modes) of memory cells.</p> |
