| 摘要 |
With use of MOCVD method, there are grown in sequence on an n-type GaAs substrate 11, an n-type lower clad 12, an active layer 13, and a p-type upper cladding layer 14 to constitute a light emitting portion. On top of the light emitting portion, there are grown in sequence a p-type intermediate layer 15 and a p-type current diffusion layer 16 made of AlGaInP semiconductor. The intermediate layer 15 made of AlGaInP semiconductor is provided with a growth rate of 1 mum/h or less and a lattice match ratio DELTAa/a against GaAs of -3.2% or more and -2.5% or less. A V/III ratio of the intermediate layer 15 in growth and a V/III ratio of the current diffusion layer 16 in growth are so set that a number of crystal defects observed on the crystal surface is 20 or less per semiconductor light-emitting device. Thus-fabricated semiconductor light-emitting device is high in intensity and small in power consumption, and enables enhancement of productivity.
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