发明名称 RAPID THERMAL PROCESS APPARATUS
摘要 PURPOSE: A rapid thermal process apparatus is provided to measure correctly each part of a wafer and prevent a damage of the wafer in a rapid thermal process by reducing a range of an error of a thermal sensor. CONSTITUTION: A lamp array(200) is installed at an upper side of a wafer in order to heat the wafer loaded on an upper surface of a base within a process chamber. The lamp array(200) is formed with a plurality of lamps(210). A quartz window assembly(220) is formed at a lower side of the lamp array(200). A sense portion(300) is installed at the base in order to detect the temperature of the wafer. The sense portion(300) is formed with a plurality of thermal sensor portions(310 to 340) having the first thermal sensor(TSc1 to TSc4) and the second thermal sensor(TS01 to TS04) as one couple. A thermal control portion(400) controls a multi-zone lamp driver(500) in order to satisfy a processing temperature condition.
申请公布号 KR20030002860(A) 申请公布日期 2003.01.09
申请号 KR20010038606 申请日期 2001.06.30
申请人 DONGBU ELECTRONICS CO., LTD. 发明人 KIM, DO SEOK;KIM, MIN SEON
分类号 H01L21/324;(IPC1-7):H01L21/324 主分类号 H01L21/324
代理机构 代理人
主权项
地址